? semiconductor components industries, llc, 2000 october, 2000 rev. 2 1 publication order number: mbrs2040lt3/d mbrs2040lt3 surface mount schottky power rectifier smb power surface mount package . . . employing the schottky barrier principle in a metaltosilicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. ? compact package with jbend leads ideal for automated handling ? highly stable oxide passivated junction ? guardring for overvoltage protection ? low forward voltage drop mechanical characteristics: ? case: molded epoxy ? epoxy meets ul94, vo at 1/8 ? weight: 95 mg (approximately) ? maximum temperature of 260 c / 10 seconds for soldering ? cathode polarity band ? available in 12 mm tape, 2500 units per 13 inch reel, add at3o suffix to part number ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? marking: bkjl maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 40 v average rectified forward current (at rated v r , t c = 103 c) i o 2.0 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 104 c) i frm 4.0 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 70 a storage/operating case temperature t stg , t c 55 to +150 c operating junction temperature t j 55 to +125 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s device package shipping ordering information smb case 403a plastic http://onsemi.com mbrs2040lt3 smb 2500/tape & reel schottky barrier rectifier 2.0 amperes 40 volts marking diagram bkjl bkjl = device code
mbrs2040lt3 http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance e junctiontolead (note 1.) thermal resistance e junctiontoambient (note 2.) r q jl r q ja 22.5 78 c/w electrical characteristics maximum instantaneous forward voltage (note 3 ) v f t j = 25 c t j = 125 c volts m ax i mum i ns t an t aneous f orwar d v o lt age (n o t e 3 . ) (i f = 2.0 a) see figure 2 (i f = 4.0 a) 0.43 0.50 0.34 0.45 maximum instantaneous reverse current (note 3 ) i r t j = 25 c t j = 100 c ma m ax i mum i ns t an t aneous r everse c urren t (n o t e 3 . ) (v r = 40 v) see figure 4 (v r = 20 v) 0.8 0.1 20 6.0 1. minimum pad size (0.108 x 0.085 inch) for each lead on fr4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on fr4 board. 3. pulse test: pulse width 250 m s, duty cycle 2.0%.
mbrs2040lt3 http://onsemi.com 3 figure 1. typical forward voltage figure 2. maximum forward voltage figure 3. typical reverse current figure 4. maximum reverse current figure 5. current derating figure 6. forward power dissipation 0 v f , instantaneous forward voltage (volts) 100 10 1.0 v f , maximum instantaneous forward voltage (volts) 0 1.0 0.1 40 0 v r , reverse voltage (volts) 100e-3 10e-3 1.0e-3 100e-6 10e-6 1.0e-6 v r , reverse voltage (volts) 20 60 0 t l , lead temperature ( c) 3.5 2.0 1.5 1.0 0.5 0 i o , average forward current (amps) 0.5 0 1.2 1.0 0.8 0.6 0.2 0 2.0 40 i f , instantaneous forward current (amps) i 0.1 0.6 0.2 0.4 0.8 0.2 0.4 0.6 0.8 10 100 10 20 30 , average forward current (amps) i o 80 120 100 2.5 1.0 1.5 2.5 3.0 0.4 p fo , average power dissipation (watts) i f , instantaneous forward current (amps) , reverse current (amps) r 40 0 v r , reverse voltage (volts) 100e-3 10e-3 1.0e-3 100e-6 10e-6 1.0e-6 i 10 20 30 , maximum reverse current (amps) r 140 3.0 t j = 125 c t j = 100 c t j = -40 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c square wave dc i pk /i o = i pk /i o = 5 i pk /i o = 10 i pk /i o = 20 i pk /i o = 20 i pk /i o = 10 i pk /i o = 5 i pk /i o = square wave dc 100
mbrs2040lt3 http://onsemi.com 4 figure 7. capacitance figure 8. typical operating temperature derating* figure 9. thermal response junction to lead figure 10. thermal response junction to ambient 30 0 v r , reverse voltage (volts) 1000 100 10 v r , dc reverse voltage (volts) 25 40 0 105 85 75 65 100 0.1 0.00001 t, time (s) 1.0 0.1 0.01 c, capacitance (pf) t r 15 5.0 10 20 25 35 40 30 35 5.0 10 20 15 95 115 125 0.0001 0.001 0.01 1.0 10 , derated operating temperature ( c) j 0.001 , transient thermal resistance (normalized) (t) t, time (s) 1.0 0.1 0.01 r 0.001 , transient thermal resistance (normalized) (t) * reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re- verse voltage conditions. calculations of t j therefore must include forward and reverse power effects. the allowable operating t j may be calculated from the equation: t j = t jmax r(t)(pf + pr) where r(t) = thermal impedance under given conditions, pf = forward power dissipation, and pr = reverse power dissipation this graph displays the derated allowable t j due to reverse bias under dc conditions only and is calculated as t j = t jmax r(t)pr, where r(t) = rthja. for other power applications further calculations must be performed. r tja = 22.5 c/w 42 c/w 61 c/w 78 c/w 92 c/w rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% 100 0.1 0.00001 1,000 0.0001 0.001 0.01 1.0 10 rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% t j = 25 c
mbrs2040lt3 http://onsemi.com 5 minimum solder pad sizes mm inches 0.085 2.159 0.108 2.743 0.089 2.261
mbrs2040lt3 http://onsemi.com 6 package dimensions smb plastic package case 403a03 issue d a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59
mbrs2040lt3 http://onsemi.com 7 notes
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